N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V.(Human Body Model) • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Suffix U : Qualified to AEC-Q101. ex) 2N7002KU-RTK/HU

文件：370.33 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

60V N-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

文件：689.54 Kbytes 页数：6 Pages

GOOD-ARK

固锝电子

丝印：KU；N Channel MOSFET

文件：56.45 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

Advanced MOSFET process technology

文件：642.66 Kbytes 页数：7 Pages

SILIKRON

新硅能微电子

60V N-Channel MOSFET

文件：689.54 Kbytes 页数：6 Pages

GOOD-ARK

固锝电子

N Channel MOSFET

文件：56.45 Kbytes 页数：4 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

MOSFET

Silikron

新硅能微电子