2N7002L 6V N-channel MOSFET

1 Features • Low On-Resistantance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Operating Junction and Storage Temperature: – –65°C to +150°C • 2kV Gate-Source ESD Rating 2 Applications • Personal Electronics • Building Automation • Industrial Automatio

文件：1.26876 Mbytes 页数：25 Pages

TI

德州仪器

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This new generation MOSFET has been designed to minimize the on state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • DC-DC Converters • Power management functions • Battery

文件：85.79 Kbytes 页数：3 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • Motor Control • Power Management Functions Features and Benefits • Low-On Re

文件：68.63 Kbytes 页数：3 Pages

DIODES

美台半导体

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important.

文件：24.81 Kbytes 页数：2 Pages

CALOGIC