N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • ESD protected up to 2KV • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request

文件：425.76 Kbytes 页数：3 Pages

MCC

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

文件：701.39 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：72K；Package：SOT-563；Plastic-Encapsulate MOSFETS

FEATURE  High density cell design for LowRDS(on)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability  ESD protected APPLICATION  Load Switch for Portable Devices  DC/DC Converter

文件：1.1607 Mbytes 页数：4 Pages

YFWDIODE

佑风微

Small Signal MOSFETS

MCC

美微科