丝印：W18NK80Z；Package：TO-247；N-CHANNEL 800V - 0.34??- 19A TO-247 Zener-Protected SuperMESH?줡ower MOSFET

■ TYPICAL RDS(on) = 0.34 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

文件：309.73 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.34廓 - 19A - TO-247 Zener-protected SuperMESH??Power MOSFET

文件：269.66 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 800V - 0.34??- 19A TO-247 Zener-Protected SuperMESH?줡ower MOSFET

■ TYPICAL RDS(on) = 0.34 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

文件：309.73 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

TI

德州仪器

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TO247-3

ST

上传：深圳市励创源科技有限公司