isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.4 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET??II MOSFET

DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is particularly suitable in OR-ing function circuits and synchronous rectification. ■ TYPICAL RDS(on) = 0.002 Ω ■ 100 AV

文件：292.98 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

文件：449.62 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.0032ohm - 120A - D2PAK/I2PAK/TO-220 STripFET TM III Power MOSFET

文件：449.62 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30-V (D-S) MOSFET

文件：1.027369 Mbytes 页数：7 Pages

VBSEMI

微碧半导体