N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：377.19 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.81 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：W20NK50Z；Package：TO-247；N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：133.58 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

丝印：W20NK50Z；Package：TO-247；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such seri

文件：383.12 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 500V -0.23廓- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH??MOSFET

文件：380.54 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：W20NK50Z；Package：TO-247；N-channel 500 V, 0.23 廓, 17 A SuperMESH??Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK

文件：613.26 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N沟道500 V、0.23 Ohm、20 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-247封装

该器件是一款有齐纳管保护的N-沟道功率MOSFET，采用意法半导体的SuperMESH™技术开发，通过意法半导体基于制程的PowerMESH™布局加以优化。除了将导通电阻显著降低，该器件还确保达到非常好的dv/dt性能，以满足最严苛的应用要求。 • 超高dv/dt性能 \n• 经过100％雪崩测试 \n• 栅极电荷最小化 \n• 超低本征电容;

ST

意法半导体