isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=40A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.052Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.47 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY??MOSFET

DESCRIPTION This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 0.042Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ VERY L

文件：116.08 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY™ MOSFET

ST

意法半导体

N-channel 150V - 0.045廓 - 40A - D2PAK MESH OVERLAY??Power MOSFET

Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Features ■ Exceptional dv/dt capability ■ Gate charge minimized ■ Very

文件：322.52 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 150V - 0.042ohm - 40A D2PAK MESH OVERLAY??MOSFET

Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Features ■ Exceptional dv/dt capability ■ Gate charge minimized ■ Very

文件：289.01 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 52mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.05 Kbytes 页数：2 Pages

ISC

无锡固电