isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=47A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.09Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：352.17 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh?줡ower MOSFET

DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche character istics. The adoption of the Company’s

文件：117.19 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.075 廓 typ., 35 A FDmesh??II Power MOSFET (with fast diode) in a TO-247 package

Description This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast

文件：1.043589 Mbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：348.88 Kbytes 页数：2 Pages

ISC

无锡固电

Automotive-grade N-channel 600 V, 0.075 Ohm typ., 35 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Designed for automotive applications and AEC-Q101 qualified\nThe worldwide best R\nDS(on)*area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities.;

ST

意法半导体