isc N-Channel Mosfet Transistor

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ISC

无锡固电

丝印：62NM60N；Package：TO-247；N-channel 600 V, 0.04 廓 typ., 65 A, MDmesh??II Power MOSFET in a TO-247 package

文件：793.48 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.04 Ohm typ., 65 A MDmesh(TM) II Power MOSFET in a TO-247 package

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most 100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance;

ST

意法半导体

TO-247

ST

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ST

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