N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

文件：310.71 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET

文件：365.47 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

文件：459.62 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：W4N150；Package：TO-247；N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

文件：762.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：332.89 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道1500 V、5 Ohm、4 A PowerMESH(TM) 功率MOSFET，TO-247封装

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.\n\n The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) • 100% avalanche tested \n• High speed switching \n• Intrinsic capacitances and Qg minimized \n• Creepage distance path is 5.4 mm (typ.) for TO-3PF \n• Fully isolated TO-3PF plastic packages;

ST

意法半导体