STW4N150中文资料N沟道1500 V、5 Ohm、4 A PowerMESH(TM) 功率MOSFET，TO-247封装数据手册ST规格书
STW4N150规格书详情
描述 Description
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
特性 Features
• 100% avalanche tested
• High speed switching
• Intrinsic capacitances and Qg minimized
• Creepage distance path is 5.4 mm (typ.) for TO-3PF
• Fully isolated TO-3PF plastic packages
技术参数
- 制造商编号
：STW4N150
- 生产厂家
：ST
- Package
：TO-247
- Grade
：Industrial
- VDSS(V)
：1500
- RDS(on)_max(@ VGS=10V)(Ω)
：7
- Drain Current (Dc)_max(A)
：4
- PTOT_max(W)
：160
- Qg_typ(nC)
：30
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO-247-3 |
996880 |
只做原装,欢迎来电资询 |
询价 | ||
ST |
24+ |
TO-247 |
5000 |
全新原装正品,现货销售 |
询价 | ||
STM |
24+/25+ |
TO-247 |
900 |
原装正品现货库存价优 |
询价 | ||
ST/意法 |
25+ |
TO-247 |
32000 |
ST/意法全新特价STW4N150即刻询购立享优惠#长期有货 |
询价 | ||
ST |
17+ |
TO-247 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
24+ |
TO247-3 |
1798 |
十年芯程一路原装 |
询价 | ||
ST |
24+ |
TO-247 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
STM |
23+ |
TO-247 |
50000 |
只做原装正品 |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST/意法 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 |
