STW4N150数据手册ST中文资料规格书
STW4N150规格书详情
描述 Description
Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
特性 Features
• 100% avalanche tested
• High speed switching
• Intrinsic capacitances and Qg minimized
• Creepage distance path is 5.4 mm (typ.) for TO-3PF
• Fully isolated TO-3PF plastic packages
技术参数
- 制造商编号
:STW4N150
- 生产厂家
:ST
- Package
:TO-247
- Grade
:Industrial
- VDSS(V)
:1500
- RDS(on)_max(@ VGS=10V)(Ω)
:7
- Drain Current (Dc)_max(A)
:4
- PTOT_max(W)
:160
- Qg_typ(nC)
:30
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
原厂原装 |
5850 |
原装正品 现货库存价格优势! |
询价 | ||
STM |
两年内 |
NA |
600 |
实单价格可谈 |
询价 | ||
ST |
17+ |
TO-247 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
2025+ |
TO-247 |
3577 |
全新原厂原装产品、公司现货销售 |
询价 | ||
ST(意法) |
24+ |
TO-247 |
8311 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
询价 | ||
ST/意法 |
21+ |
TO247-3 |
1324 |
只做原装,假一罚十 |
询价 | ||
ST |
22+ |
30000 |
原装现货,可追溯原厂渠道 |
询价 | |||
ST/意法半导体 |
2023+ |
TO-247-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
询价 | ||
ST/意法半导体 |
25 |
TO-247-3 |
6000 |
原装正品 |
询价 | ||
ST/意法 |
21+ |
TO-247-3 |
20000 |
百域芯优势 实单必成 可开13点增值税 |
询价 |