isc N-Channel MOSFET Transistor

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无锡固电

N-channel 650 V, 0.055 廓, 49 A TO-247 FDmesh??II Power MOSFET

文件：550.1 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package

The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsi The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance\nExtremely high dv/dt and avalanche capabilities;

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意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=50A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.065Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：350.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.054 OHM, 50 A MDmesh II Power MOSFET

文件：499.27 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体