isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

文件：372.65 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 300 V, 0.063 廓 typ, 42 A, STripFET??II Power MOSFET in D2PAK, TO-220 and TO-247 packages

文件：1.05323 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N沟道300 V、0.063 Ohm典型值、42 A STripFET(TM) II功率MOSFET，TO-247封装

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and c • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

文件：333.09 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 300 V, 0.063 廓 typ, 42 A, STripFET??II Power MOSFET in D2PAK, TO-220 and TO-247 packages

文件：1.05323 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

文件：332.65 Kbytes 页数：2 Pages

ISC

无锡固电