STP46NF30

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

STP46NF30

N沟道300 V、0.063 Ohm典型值、42 A STripFET(TM) II功率MOSFET，TO-220封装; • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.\n\n

STP46NF30

N-channel 300 V, 0.063 廓 typ, 42 A, STripFET??II Power MOSFET in D2PAK, TO-220 and TO-247 packages

STW46NF30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter

STW46NF30

N-channel300V,0.063廓typ,42A,STripFET??IIPowerMOSFETinD2PAK,TO-220andTO-247packages