isc N-Channel Mosfet Transistor

文件：419.21 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247

文件：715.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道500 V、0.2 Ohm、14 A MDmesh(TM) II功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247

文件：715.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：294 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel Mosfet Transistor

文件：302.96 Kbytes 页数：2 Pages

ISC

无锡固电