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STW34NB20

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW34NB20

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.075Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STW34NB20

N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW34NB20

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET;

STSTMicroelectronics

意法半导体意法半导体集团

STW34NB20_04

N-CHANNEL 200V - 0.062 OHM - 34A TO-247 PowerMESH MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

W34NB20

N-CHANNEL200V-0.062OHM-34ATO-247PowerMESHMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    STW34NB20

  • 功能描述:

    MOSFET N-Ch 200 Volt 34 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
23+
TO-247
65400
询价
ST/意法
2410+
TO-3P
5300
原装正品.假一赔百.正规渠道.原厂追溯.
询价
ST意法
24+
TO-247
13500
免费送样原盒原包现货一手渠道联系
询价
ST
17+
TO-3P
6200
询价
ST
24+
TO-247-3
3314
询价
ST
05+
TO-247
2380
原装进口
询价
ST
23+
TO247
4600
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
ST
24+
TO-247
1000
原装现货热卖
询价
ST
24+
09+
3
原装现货假一罚十
询价
ST
16+
TO-3P
10000
全新原装现货
询价
更多STW34NB20供应商 更新时间2025-7-28 9:20:00