isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.135Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-CHANNEL 600V - 0.125ohm - 26A TO-247 Zener-Protected MDmesh TM Power MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

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STMICROELECTRONICS

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MOSFET N-CH 600V 30A TO-247

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N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making

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Low input capacitance and gate charge

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

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丝印：26NM60N；Package：TO-247；N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh™ II Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical struc

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：398.44 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

文件：398.58 Kbytes 页数：2 Pages

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N沟道600 V、0.135 Ohm典型值、20 A MDmesh II功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

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