首页 >STW20NC60VD>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
30A-600V-veryfastIGBT Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
30A-600V-veryfastIGBT Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
30A-600V-veryfastIGBT Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL30A-600VTO-247VeryFastPowerMESHIGBT DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhighfrequencyapplications. GeneralFeatures | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
30A-600V-veryfastIGBT Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
30A-600V-veryfastIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL30A-600V-TO-220/TO-247VeryFastPowerMESHIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
30A-600V-veryfastIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
30A-600V-veryfastIGBT Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
30A-600V-veryfastIGBT Description ThisIGBTutilizestheadvancedPowerMESH™ processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features •Highfrequencyoperationupto50kHz •LowerCRES/CIESratio(nocross-conduction susceptibility) •Highcurrentcapa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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