丝印：TIP127；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件：1.78214 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Collec

文件：100.15 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP120, TIP121 and TIP122 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：105.7 Kbytes 页数：6 Pages

POINN

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLNGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP120/121/122 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

文件：132.52 Kbytes 页数：4 Pages

SAVANTIC

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VCEO=-120V(Min.)

文件：222.88 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

Silicon PNP Darlington Power Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 •

文件：163.14 Kbytes 页数：2 Pages

MCC

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Darlington TRANSISTOR (NPN)

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：555.16 Kbytes 页数：3 Pages

JIANGSU

长电科技

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

文件：510.76 Kbytes 页数：5 Pages

SEMIHOW