N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 Avalanch

文件：341.43 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：324.89 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道600V 0.26 Ohm 20A TO-247 FDmesh™功率MOSFET

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • High dv/dt and avalanche capabilities \n• Low input capacitance and gate charge \n• 100% Avalanche tested \n• Tight process control and high manufacturing yields \n• Low gate input resistancE;

ST

意法半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.29Ω(Max)@VGS= 10V APPLICATIONS · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive

文件：376 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：358.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ High dv/dt and avalanche capabilities ■ 100 Avalanch

文件：341.43 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体