P30N10

N-channel100V,0.02廓typ.,32ASTripFET??F7PowerMOSFETinaTO-220package

Description ThisN-channelPowerMOSFETutilizes STripFET™F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternal capacitanceandgatechargeforfasterandmore efficientswitching. Features AmongthelowestRDS(o

STB30N10

N-CHANNEL100V-0.06ohm-30A-D2PAKPOWERMOSTRANSISTOR

N-CHANNEL100V-0.06Ω-30A-D2PAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION ■SURFACE-MOUNTINGD2PAK

STU30N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

UTT30N10

30A,100VN-CHANNELPOWERMOSFET

UTT30N10

IscN-ChannelMOSFETTransistor