isc P-Channel MOSFET Transistor

DESCRIPTION ·Drain Source Voltage : VDSS= -30V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switch

文件：326.1 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：52P3LLH6；Package：DPAK；P-channel 30 V, 0.01 廓 typ., 52 A, STripFET??H6 Power MOSFET in a DPAK package

文件：778.47 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

P沟道30 V、0.01 Ohm典型值、52 A STripFET H6功率MOSFET，DPAK封装

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

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意法半导体

原厂封装

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TO-252

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