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STD5N95K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:298.95 Kbytes 页数:2 Pages

ISC

无锡固电

STD5N95K3

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

文件:1.41415 Mbytes 页数:23 Pages

STMICROELECTRONICS

意法半导体

STD5N95K3

N沟道950 V、3 Ohm、4 A有齐纳管保护的SuperMESH3(TM) 功率MOSFET,DPAK封装

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体

STF5N95K3

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

文件:1.41415 Mbytes 页数:23 Pages

STMICROELECTRONICS

意法半导体

STF5N95K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) -RDS(on) = 3.5Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:319 Kbytes 页数:2 Pages

ISC

无锡固电

STFI5N95K3

N-channel 950 V, 3 廓 typ., 4 A Zener-protected SuperMESH3?? Power MOSFET in I2PAKFP package

文件:747.37 Kbytes 页数:13 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    DPAK

  • Grade:

    Industrial

  • VDSS(V):

    950

  • RDS(on)_max(@ VGS=10V)(Ω):

    3.5

  • Drain Current (Dc)_max(A):

    4

  • PTOT_max(W):

    90

  • Qg_typ(nC):

    19

供应商型号品牌批号封装库存备注价格
ST
23+
TO252
2365
进口原装价格优惠
询价
ST/意法半导体
22+
TO-252-3
6003
原装正品现货 可开增值税发票
询价
ST(意法半导体)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
询价
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ST(意法半导体)
24+
N/A
9750
原装正品现货支持实单
询价
ST(意法半导体)
23+
N/A
6000
只做原装,正品
询价
ST/意法
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
ST(意法半导体)
23+
N/A
6000
只做原装,正品
询价
ST
24+
DPAK
5000
只做原装公司现货
询价
ST
1725+
?
7500
只做原装进口,假一罚十
询价
更多STD5N95K3供应商 更新时间2025-11-18 14:06:00