isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.51 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

文件：1.41415 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N沟道950 V、3 Ohm、4 A有齐纳管保护的SuperMESH3(TM) 功率MOSFET，IPAK封装

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the m • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

文件：1.41415 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.95 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

文件：1.41415 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体