isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.0195Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.17 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100 V, 0.015 廓, 60 A, STripFET??DeepGATE??Power MOSFET in TO-220, DPAK, TO-247, D2PAK

文件：974.65 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N沟道100 V、0.015 Ohm、60 A STripFET(TM) DeepGATE(TM) 功率MOSFET，DPAK封装

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. • Exceptional dv/dt capability \n• 100% avalanche tested \n• Extremely low on-resistance RDS(on);

ST

意法半导体

N-channel 100 V, 0.015 Ω, 60 A, STripFET™ DeepGATE™ Power MOSFET in I2PAK

Features ■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-

文件：723.23 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：2.07775 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 100 V, 0.015 廓, 60 A, STripFET??DeepGATE??Power MOSFET in TO-220, DPAK, TO-247, D2PAK

文件：974.65 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体