丝印：D3NK80Z；Package：DPAK；N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：608.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：D3NK80Z；Package：DPAK；N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features  Extremely high dv/dt capability  100 avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroel

文件：1.36185 Mbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 3.8 廓, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET

文件：888.8 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、3.8 Ohm典型值、2.5 A SuperMESH功率MOSFET，DPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体