丝印：D3NK80Z；Package：IPAK；N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：608.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：D3NK80Z；Package：IPAK；N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features  Extremely high dv/dt capability  100 avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroel

文件：1.36185 Mbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

丝印：D3NK80Z；Package：DPAK；N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features  Extremely high dv/dt capability  100 avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroel

文件：1.36185 Mbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

丝印：D3NK80Z；Package：DPAK；N-CHANNEL 800V - 3.8W - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such se

文件：608.51 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages

Features  Extremely high dv/dt capability  100 avalanche tested  Gate charge minimized  Zener-protected Applications  Switching applications Description These high voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroel

文件：1.36185 Mbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体