N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC motor controls · Switching applications

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ISC

无锡固电

N-channel 100V - 0.025廓 - 50A TO-220 / DPAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

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STMICROELECTRONICS

意法半导体

N沟道100 V、0.025 Ohm典型值、50 A STripFET II功率MOSFET，DPAK封装

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom a • Exceptional dv/dt capability \n• 100% avalanche tested \n• Low gate charge;

ST

意法半导体

N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

文件：479.52 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.025廓 - 50A TO-220 / DPAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

文件：379.2 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.025??- 50A TO-220 Low gate charge STripFET??II Power MOSFET

文件：238.79 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体