N-channel 100V - 0.025廓 - 50A TO-220 / DPAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

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STMICROELECTRONICS

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N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

文件：479.52 Kbytes 页数：11 Pages

STMICROELECTRONICS

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N-Channel 100-V (D-S) MOSFET

文件：951.48 Kbytes 页数：7 Pages

VBSEMI

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isc N-ChannelMOSFET Transistor

文件：305.35 Kbytes 页数：2 Pages

ISC

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N-channel 100V - 0.025??- 50A TO-220 Low gate charge STripFET??II Power MOSFET

文件：238.79 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N沟道100V - 0.024Ohm - 50A - TO-220低栅极电荷StripFET II MOSFET

This N-channel 100 V Power MOSFET is the latest development of STMicroelectronics unique \"single feature size\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remar • Exceptional dv/dt capability \n• Low gate charge \n• 100% avalanche tested;

ST

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 33mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.62 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifical ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer

文件：272.58 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.025??- 50A TO-220 Low gate charge STripFET??II Power MOSFET

文件：238.79 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：949.66 Kbytes 页数：7 Pages

VBSEMI

微碧半导体