isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 33mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.62 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 100V - 0.028ohm - 40A TO-220 LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifical ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer

文件：272.58 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：949.66 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N沟道100V - 0.028 Ohm - 40A - TO-220低栅极电荷StripFET(TM) II功率MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% avalanche tested;

ST

意法半导体