STB30N10

N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR

N-CHANNEL100V-0.06Ω-30A-D2PAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION ■SURFACE-MOUNTINGD2PAK

30N10

FastSwitching

30N10

N-Channel100-V(D-S)MOSFET

AM30N10

iscN-ChannelMOSFETTransistor

•FEATURES •DrainCurrent:ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=100V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=50mΩ(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •LEDbackl

CJD30N10

N-ChannelMOSFETusesadvancedtrenchtechnology

CJD30N10

N-ChannelPowerMOSFET

CJU30N10

N-ChannelPowerMOSFET

CJU30N10

N-ChannelMOSFETusesadvancedSGTtechnology

F30N10G

N-ChannelEnhancementMOSFET

Features •VDS=100V,ID=30A •RDS(ON)=17mΩ@VGS=10V(Typ.) •RDS(ON)=22mΩ@VGS=4.5V(Typ.) •HighPowerandcurrenthandingcapability •Leadfreeproductisacquired •SurfaceMountPackage MainApplications •BatteryProtection •LoadSwitch •PowerManagement

FIR30N10LG

100VN-ChannelMOSFET