N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

文件：479.52 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 100V - 0.030W - 40ohm TO-263 LOW GATE CHARGE STripFET POWER MOSFET

DESCRIPTION This Power MOSFET series realized with STMicro electronics unique STripFET process has specifical ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer a

文件：48.61 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.025廓 - 50A - D2PAK Low gate charge STripFET??II Power MOSFET

文件：411.69 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100V - 0.024Ohm - 50A - D2PAK LOW GATE CHARGE STripFET

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature Size™\\\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu Exceptional dv/dt capability\n100% avalanche tested\nLow gate charge at 100°C\nApplication oriented characterization;

ST

意法半导体

N-CHANNEL 100V - 0.024ohm - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

文件：479.52 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer app

文件：435.03 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.025廓 - 50A - D2PAK Low gate charge STripFET??II Power MOSFET

文件：411.69 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：2.37741 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 100V - 0.025廓 - 50A - D2PAK Low gate charge STripFET??II Power MOSFET

文件：411.69 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道100V 0.028 OHM 40A D2PAK低栅极电荷STripFET MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% avalanche tested;

ST

意法半导体