N-CHANNEL 100V - 0.028ohm - 40A D2PAK LOW GATE CHARGE STripFET??POWER MOSFET

DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer app

文件：435.03 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：2.37741 Mbytes 页数：8 Pages

VBSEMI

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N沟道100V 0.028 OHM 40A D2PAK低栅极电荷STripFET MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom and Computer application. It is • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% avalanche tested;

ST

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N-channel 100V - 0.025廓 - 50A TO-220 / DPAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

文件：379.2 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · AC and DC motor controls · Switching applications

文件：322.68 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100V - 0.025廓 - 50A TO-220 / DPAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkab

文件：379.2 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体