isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

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isc N-Channel MOSFET Transistor

• FEATURES • With TO-220 packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operationz • APPLICATIONS • PFC stages • LCD & PDP TV • Power supply • Switchi

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ISC

无锡固电

N-channel 200V - 0.065廓 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET??Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. Features ■ Gate charge min

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STMICROELECTRONICS

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N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET Power MOSFET

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STMICROELECTRONICS

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N沟道200 V、0.065 Ohm、30 A、D2PAK STripFET(TM)功率MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. • Gate charge minimized \n• Excellent figure of merit (RDS*Qg) \n• 100% avalanche tested \n• Very low intrinsic capacitances \n• Very good manufactuing repeability;

ST

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Very good manufacturing repeatability

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STMICROELECTRONICS

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N沟道200 V、0.065 Ohm、30 A、D2PAK STripFET(TM)功率MOSFET

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single feature size” strip-based process, which decreases the critical alignment steps to offer exceptional manufacturing reproducibility. The result is a transistor with extremely high pa • AEC-Q101 qualified \n• Gate charge minimized \n• 100% avalanche tested \n• Excellent FoM (figure of merit) \n• Very low intrinsic capacitance;

ST

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