N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

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STMICROELECTRONICS

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N-Channel 650 V (D-S) MOSFET

文件：1.10285 Mbytes 页数：9 Pages

VBSEMI

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MOSFET N-CH 620V 3.8A D2PAK

ST

意法半导体

N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

文件：1.04984 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi

文件：1.06158 Mbytes 页数：19 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电