isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=75V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.49 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 75 V, 0.0095, 80 A TO-220, D2PAK, I2PAK STripFET II Power MOSFET

文件：771.02 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道75 V、0.0095 Ohm典型值、80 A STripFET(TM) II功率MOSFET，D2PAK封装

This Power MOSFET is the latest development of STMicroelectronics unique \\\"single feature size\\\" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manu • Exceptional dv/dt capability \n• 100% avalanche tested;

ST

意法半导体

N-channel 75 V, 0.0095, 80 A TO-220, D2PAK, I2PAK STripFET II Power MOSFET

文件：771.02 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=75V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.52 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=75V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.66 Kbytes 页数：2 Pages

ISC

无锡固电