N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.36435 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：263.44 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET，D2PAK封装

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and supe • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 650 V, 0.056 廓 typ., 42 A MDmesh??V Power MOSFET in I짼PAK, TO-220, TO-220FP and D짼PAK packages

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.36435 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched a

文件：1.36435 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching appli

文件：291.76 Kbytes 页数：2 Pages

ISC

无锡固电