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STD4N62K3

N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STF4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STFI4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STI4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP4N62K3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

STP4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    STD4N62K3

  • 功能描述:

    MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
24+
TO252
8950
BOM配单专家,发货快,价格低
询价
ST/意法
22+
TO252
5000
原厂原装现货
询价
ST
23+
TO252
6996
只做原装正品现货
询价
ST
24+
DPAK
9150
绝对原装现货,价格低,欢迎询购!
询价
ST/意法半导体
22+
TO-252-3
6000
原装正品现货 可开增值税发票
询价
ST/意法
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
ST(意法半导体)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
询价
ST/意法半导体
24+
TO-252-3
4650
绝对原装公司现货
询价
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
ST
17+
TO-252
6200
100%原装正品现货
询价
更多STD4N62K3供应商 更新时间2025-5-1 16:36:00