N沟道200 V、0.019 Ohm典型值、61 A MDmesh M5功率MOSFET，D2PAK封装

These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and su • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK

文件：935.71 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 61A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.023Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK

文件：935.71 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体