isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-CHANNEL 600V - 0.9廓 - 8A - TO-220/D2PAK Fast Diode MDmesh??Power MOSFET

Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters General features ■ High dv/dt and avalanche capabilities

文件：735.3 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10877 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-CHANNEL 600V - 0.9Ohm - 8A - TO-220/D2PAK

• High dv/dt and avalanche capabilities\n• Low input capacitance and gate charge\n• 100% avalanche rated• Fast internal recovery diode\n• Low gate input resistance;

ST

意法半导体