N-channel 1000V - 5.4廓 - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such ser

文件：430.48 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：330.97 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道1000 V、5.4 Ω（典型值）、2.5 A SuperMESH功率MOSFET，采用DPAK封装

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt cap • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

ST

意法半导体

N-channel 1000V - 5.4廓 - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such ser

文件：430.48 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 1000V - 5.4廓 - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH??Power MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such ser

文件：430.48 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

1000V N-Channel MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

文件：2.93619 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子