STD5NK50ZT4

丝印：D5NK50Z；Package：DPAK；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features •100avalanchetested •Gatechargeminimized •Verylowintrinsiccapacitance •Zener-protected Applications •Switchingapplications Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelect

STD5NK50ZT4

N沟道500 V、1.22 Ohm典型值、4.4 A SuperMESH功率MOSFET，DPAK封装; • 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Zener-protected;

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.\n\n

STD5NK50ZT4

丝印：D5NK50Z；Package：TO-252；N-CHANNEL 500V - 1.22廓 - 4.4A TO-220/FP-D/IPAK-D2/I2PAK Zener-Protected SuperMESH?줞OSFET

STB5NK50ZT4

N-Channel650V(D-S)PowerMOSFET

STB5NK50ZT4

N-CHANNEL500V-1.22廓-4.4ATO-220/FP-D/IPAK-D2/I2PAKZener-ProtectedSuperMESH?줞OSFET