丝印：DPAK；Package：TO-252；Isc N-Channel MOSFET Transistor

文件：305.36 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 1.6 廓, 3.3 A, MDmesh??II Power MOSFET in DPAK package

文件：909.05 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET

文件：1.07813 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N沟道600 V、1.6 Ohm、3.3 A MDmesh(TM) II功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体