N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package

Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features  Among the lowest RDS(o

文件：1.05035 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR

N - CHANNEL 100V - 0.06Ω - 30A - D2PAK POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ VERY HIGH CURRENT CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION ■ SURFACE-MOUNTING D2PAK

文件：43.61 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：139.31 Kbytes 页数：10 Pages

Samhop

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：139.31 Kbytes 页数：10 Pages

Samhop

三合微科