P30N10

N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package

Description ThisN-channelPowerMOSFETutilizes STripFET™F7technologywithanenhanced trenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternal capacitanceandgatechargeforfasterandmore efficientswitching. Features AmongthelowestRDS(o

STB30N10

N-CHANNEL100V-0.06ohm-30A-D2PAKPOWERMOSTRANSISTOR

N-CHANNEL100V-0.06Ω-30A-D2PAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.06Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION ■SURFACE-MOUNTINGD2PAK

STD30N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

STU30N10

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

UTT30N10

IscN-ChannelMOSFETTransistor

UTT30N10

30A,100VN-CHANNELPOWERMOSFET