isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=65A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 30 V, 0.0061, 65 A, DPAK, IPAK STripFET V Power MOSFET

文件：797.61 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30-V (D-S) MOSFET

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VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit.\n • RDS(on)* Qgindustry benchmark\n• Extremely low on-resistance RDS(on)\n• Very low switching gate charge• High avalanche ruggedness\n• Low gate drive power losses;

ST

意法半导体