MOSFETs Silicon N-channel MOS (U-MOSVII-H)

Applications • Power Management Switches • DC-DC Converters Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.0 V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(ON)

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MOSFETs Silicon N-channel MOS (U-MOS??H)

文件：262.36 Kbytes 页数：9 Pages

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MOSFETs Silicon N-channel MOS (U-MOSVII-H)

Applications • Power Management Switches • DC-DC Converters Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.0 V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(O

文件：249.91 Kbytes 页数：9 Pages

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东芝

MOSFETs Silicon N-channel MOS (U-MOSVII-H)

Applications • Power Management Switches • DC-DC Converters Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 ℃ MOSFET (3) 4.0 V drive (4) Low drain-source on-resistance : RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(O

文件：249.91 Kbytes 页数：9 Pages

TOSHIBA

东芝