SSM3K35CT

Small Low ON resistance MOSFETs; Drain current ID 0.18 A \nPower Dissipation PD 0.1 W \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V \n;

Polarity：N-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国\n

SSM3K35CT

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM3K35CTC

丝印：N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS=20v +RDS(ON)=300mQ(typ)@VGS=2.5V/ +RDS(ON)=250mQ(typ)@VGS=4.5V/ +ESDProtectedupto2KV.

SSM3K35CTC

Small Low ON resistance MOSFETs; Drain current ID 0.25 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V \n;

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国\n

SSM3K35CTC

MOSFETs Silicon N-Channel MOS

SSM3K35FS

TOSHIBAField-EffectTransistorSiliconN-ChannelMOSType

○High-SpeedSwitchingApplications ○AnalogSwitchApplications •1.2-Vdrive •LowON-resistance:Ron=20Ω(max)(@VGS=1.2V) :Ron=8Ω(max)(@VGS=1.5V) :Ron=4Ω(max)(@VGS=2.5V)

SSM3K35MFV

High-SpeedSwitchingApplicationsAnalogSwitchApplications