SSM3K35CTC

Marking：N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS=20v +RDS(ON)=300mQ(typ)@VGS=2.5V/ +RDS(ON)=250mQ(typ)@VGS=4.5V/ +ESDProtectedupto2KV.

SSM3K35CTC

MOSFETs Silicon N-Channel MOS

SSM3K35AFS

MOSFETsSiliconN-ChannelMOS

SSM3K35AMFV

MOSFETsSiliconN-ChannelMOS

SSM3K35CT

TOSHIBAField-EffectTransistorSiliconN-ChannelMOSType

SSM3K35FS

TOSHIBAField-EffectTransistorSiliconN-ChannelMOSType

○High-SpeedSwitchingApplications ○AnalogSwitchApplications •1.2-Vdrive •LowON-resistance:Ron=20Ω(max)(@VGS=1.2V) :Ron=8Ω(max)(@VGS=1.5V) :Ron=4Ω(max)(@VGS=2.5V)

SSM3K35MFV

High-SpeedSwitchingApplicationsAnalogSwitchApplications