丝印：N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.52997 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

MOSFETs Silicon N-Channel MOS

文件：257.26 Kbytes 页数：9 Pages

TOSHIBA

东芝

Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：泰国 Drain current ID 0.25 A \nPower Dissipation PD 0.5 W \nDrain-Source voltage VDSS 20 V \nGate-Source voltage VGSS +/-10 V ;

Toshiba

东芝

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V)

文件：213.04 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Speed Switching Applications Analog Switch Applications

文件：205.13 Kbytes 页数：5 Pages

TOSHIBA

东芝