丝印：NC；Package：SOT-323；High Speed Switching Applications

文件：162.47 Kbytes 页数：5 Pages

TOSHIBA

东芝

N-Channel 60-V (D-S) MOSFET

文件：1.01475 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Small Low ON resistance MOSFETs

Polarity：N-ch\nGeneration：π-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 泰国 Drain current ID 0.2 A \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

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MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

文件：231.24 Kbytes 页数：8 Pages

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MOSFETs Silicon N-Channel MOS

文件：218.16 Kbytes 页数：8 Pages

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东芝

MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

文件：231.24 Kbytes 页数：8 Pages

TOSHIBA

东芝