丝印：NN；Package：S-Mini；MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

文件：231.24 Kbytes 页数：8 Pages

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MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

文件：231.24 Kbytes 页数：8 Pages

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

文件：231.24 Kbytes 页数：8 Pages

TOSHIBA

东芝

MOSFETs Silicon N-Channel MOS

1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

文件：230.56 Kbytes 页数：8 Pages

TOSHIBA

东芝